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Provisional Data Sheet No. PD 9.1289B
HEXFET(R) POWER MOSFET
IRFY240CM
N-CHANNEL
200 Volt, 0.18 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Product Summary
Part Number IRFY240CM BVDSS 200V RDS(on) 0.18 ID 16A
Features
n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ V GS=10V, TC = 25C ID @ VGS=10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ Tstg Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalance Energy Avalance Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight
IRFY240CM
16 10.2 64 100 0.8 20 580 16 10 5 -55 to 150 300 (0.063 in (1.6mm) from case for 10 sec) 4.3 (typical)
Units
A W W/K V mJ A mJ V/ns C C g
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Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
200 -- -- -- 2.0 6.1 -- -- -- -- 32 2.2 14.2 -- -- -- -- -- --
Typ. Max. Units
-- 0.29 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.18 0.25 4.0 -- 25 250 100 -100 60 10.6 37.6 20 152 58 67 -- -- V
Test Conditions
VGS = 0V, ID = 1.0mA
V/C Reference to 25C, ID = 1.0mA VGS = 10V, ID = 10.2A VGS = 10V, ID = 16A V VDS = VGS, ID = 250A S ( ) VDS 15V, IDS = 10.2A VDS = 0.8 x max. rating,VGS = 0V A VDS = 0.8 x max. rating VGS = 0V, TJ = 25C VGS = 20V nA VGS = -20V VGS = 10V, ID = 16A nC VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 100V, ID =16A, RG = 9.1 VGS = 10V ns see figure 10
Measured from the drain lead, 6mm (0.25 in.) from package to center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. Modified MOSFET symbol showing the internal inductances.
IGSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1300 400 130
-- -- --
pF
VGS = 0v, V DS = 25V f = 1.0MHz. see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR t on Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
-- -- -- -- -- -- -- -- -- -- 16 64 1.5 500 5.3 A
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
V ns C
Tj = 25C, IS = 16A, VGS = 0V Tj = 25C, IF = 16A, di/dt 100 A/s VDD 50 V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case RthJA Junction-to-Ambient RthCS Case-to-Sink
Min. Typ. Max. Units
-- -- -- -- -- 0.21 1.25 80 K/W --
Test Conditions
Typical socket mount Mounting surface flat, smooth
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IRFY240CM Device
Fig. 1 -- Typical Output Characteristics TC = 25C
Fig. 2 -- Typical Output Characteristics TC = 150C
ID = 16A
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs. Temperature
I D = 16A
Fig. 5 -- Typical Capacitance Vs. Drain-to-Source Voltage
Fig. 6 -- Typical Gate Charge Vs. Gate-to-Source Voltage
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1000
OPERAT ION IN THIS AREA LIMITED BY R DS(on)
ID , Drain Current (A)
100
10s
10
100s
1 1
TC = 25C TJ = 150C Single Pulse
10 100
1ms 10ms
A
1000
VDS , Drain-to-Source Voltage (V)
Fig. 7 -- Typical Source-to-Drain Diode Forward Voltage
Fig. 8 -- Maximum Safe Operating Area
16
ID, Drain Current (Amps)
12
8
4
0 25 50 75 100 125
A
150
TC , Case Temperature (C)
Fig. 9 -- Maximum Drain Current Vs. Case Temperature
Fig. 10a -- Switching Time Test Circuit
Fig. 10b -- Switching Time Waveforms
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IRFY240CM Device
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (TH ERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01
P
DM
t1 t2
Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDMx Z thJC + T C
A
1
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig. 11 -- Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
V (BR)DSS
VDS
L
DRIVER
tp
RG
D.U.T I AS tp 0.01
+ - VDD
A
I AS
Fig. 12a -- Unclamped Inductive Test Circuit
Fig. 12b -- Unclamped Inductive Waveforms
E AS , Single Pulse Avalanche Energy (mJ)
600
500
400
300
200
100
0
I D = 18A V DD = 50V
25 50 75 100 125
A
150
Starting TJ , Junction Temperature (C)
Fig. 12c -- Max. Avalanche Energy vs. Current
Fig. 13a -- Gate Charge Test Circuit
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Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
@ VDD = 50V, Starting TJ = 25C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)] Peak IL = 16A, VGS = 10V, 25 R G 200 (figure 12) I SD 16A, di/dt 150A/s, VDD BVDSS, T J 150C Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Fig. 13b -- Basic Gate Charge Waveform
Case Outline and Dimensions -- TO-257AA
Pin 1 - Drain Pin 2 - Source Pin 3 - Gate
3 1 2
TO-257AA
NON-STANDARD PIN CONFIGURATION Pin 1 - Gate Pin 2 - Drain Pin 3 - Source Order Part Type IRFY240C
NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4. Outline conforms to JEDEC outline TO-257AA
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44(0) 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/96
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